Small-q electron-phonon scattering and linear dc resistivity in high-T_c oxides

摘要

We examine the effect on the DC resistivity of small-q electron-phononscattering, in a system with the electronic topology of the high-T_c oxides.Despite the fact that the scattering is dominantly forward, its contribution tothe transport can be significant due to ``ondulations'' of the bands in theflat region and to the umpklapp process. When the extended van-Hovesingularities are sufficiently close to $E_F$ the acoustic branch of thephonons contribute significantly to the transport. In that case one can obtainlinear $T$ dependent resistivity down to temperatures as low as 10 K, even ifelectrons are scattered also by optical phonons of about 500 K as reported byRaman measurements.